Determining energy-band offsets in quantum wells using only spectroscopic dataKOTELES, E. S.Journal of applied physics. 1993, Vol 73, Num 12, pp 8480-8484, issn 0021-8979Article

Integrated planar waveguide demultiplexers for high-density WDM applicationsKOTELES, E. S.Fiber and integrated optics. 1999, Vol 18, Num 4, pp 211-244, issn 0146-8030Article

Coupling of ground and excited state excitons in GaAs under uniaxial stressJAGANNATH, C; KOTELES, E. S.Solid state communications. 1986, Vol 58, Num 7, pp 417-419, issn 0038-1098Article

Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laserSHARFIN, W. F; SCHLAFER, J; KOTELES, E. S et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 8, pp 1709-1712, issn 0018-9197Article

Experimental exciton binding energies in GaAs/Al_xGa_1-xAs quantum wells as a function of well widthKOTELES, E. S; CHI, J. Y.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6332-6335, issn 0163-1829Article

Electric field induced exciton binding in a GaAs/AlGaAs quantum wellCHEN, Y. J; ELMAN, B; KOTELES, E. S et al.Solid state communications. 1989, Vol 72, Num 1, pp 25-29, issn 0038-1098Article

Luminescence linewidths of excitons in GaAs quantum wells below 150KLEE, J; KOTELES, E. S; VASSELL, M. O et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5512-5516, issn 0163-1829Article

Mixing of valence subbands in GaAs/Al_xGa_1-xAs multiple quantum wells by uniaxial stressLEE, J; JAGANNATH, C; VASSELL, M. O et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 8, pp 4164-4170, issn 0163-1829Article

Difference phonon scattering : a Raman excitation in GaAs quantum wellsLIU, Y; SOORYAKUMAR, R; KOTELES, E. S et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6832-6835, issn 0163-1829, 4 p.Article

Spatially selective modification of GaAs/AlGaAs quantum wells by SiO₂ capping and rapid thermal annealingCHI, J. Y; WEN, X; KOTELES, E. S et al.Applied physics letters. 1989, Vol 55, Num 9, pp 855-857, issn 0003-6951, 3 p.Article

Triply resonant Raman scattering via nonequilibrium phonons in GaAs quamtum wellsLIU, Y; SOORYAKUMAR, R; KOTELES, E. S et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 12, pp 6769-6775, issn 0163-1829Article

GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealingELMAN, B; KOTELES, E. S; MELMAN, P et al.Journal of applied physics. 1989, Vol 66, Num 5, pp 2104-2107, issn 0021-8979Article

Very high purity GaAs: free exciton dominated 5K photoluminescence and magnetophotoluminescence spectraKOTELES, E. S; ELMAN, B. S; ZEMON, S. A et al.Solid state communications. 1987, Vol 62, Num 10, pp 703-706, issn 0038-1098Article

Thermally induced quantum well shape modification in strained heterostructuresKOTELES, E. S; ELMAN, B; ARMIENTO, C. A et al.Superlattices and microstructures. 1991, Vol 9, Num 4, pp 533-536, issn 0749-6036, 4 p.Article

Studies of free-to-bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor-phase epitaxy and molecular-beam epitaxyZEMON, S; NORRIS, P; KOTELES, E. S et al.Journal of applied physics. 1986, Vol 59, Num 8, pp 2828-2832, issn 0021-8979Article

Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealingCHI, J. Y; KOTELES, E. S; HOLMSTROM, R. P et al.Applied physics letters. 1988, Vol 53, Num 22, pp 2185-2187, issn 0003-6951Article

InGaAs/GaAs strained quantum wells with a 1.3 υm band edge at room temperatureMELMAN, P; ELMAN, B; JAGANNATH, C et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1436-1438, issn 0003-6951Article

Resonant surface enhanced Raman scattering by ultra thin Langmuir-Blodgett polydiacetylene polymer filmsCHEN, Y. J; TRIPATHY, S. K; CARTER, G. M et al.Solid state communications. 1986, Vol 58, Num 2, pp 97-100, issn 0038-1098Article

Influence of elastic scattering from neutral impurities on the exciton-polariton photoluminescence lineshape in GaAsLEE, J; KOTELES, E. S; VASSELL, M. O et al.Journal of luminescence. 1985, Vol 34, Num 1-2, pp 63-75, issn 0022-2313Article

Elastic scattering of exciton polaritons by neutral impuritiesKOTELES, E. S; LEE, J; SALERNO, J. P et al.Physical review letters. 1985, Vol 55, Num 8, pp 867-870, issn 0031-9007Article

GaAs₁-_xP_x/GaAs quantum-well structures with tensile-strained barriersAGAHI, F; LAU, K. M; KOTELES, E. S et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 459-465, issn 0018-9197Article

Modification of the coupling of double quantum wells through band structure changes under hydrostatic pressureBURNETT, J. H; CHEONG, H. M; PAUL, W et al.Superlattices and microstructures. 1989, Vol 6, Num 2, pp 167-170, issn 0749-6036, 4 p.Article

Optical investigation of biexcitons and bound excitons in GaAs quantum wellsCHARBONNEAU, S; STEINER, T; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 3583-3586, issn 0163-1829Article

Saturation of light- and heavy-hole exciton energies in very narrow quantum wellsKOTELES, E. S; OWENS, D. A; BERTOLET, D. C et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10139-10141, issn 0163-1829Article

Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixingHAYSOM, J. E; DELAGE, A; HE, J.-J et al.IEEE journal of quantum electronics. 1999, Vol 35, Num 9, pp 1354-1363, issn 0018-9197Article